Gated INTERfaces for FAST information processing
INTERFAST will develop a novel technological platform for the voltage control of interfacial magnetism. The key idea is to manipulate, via a gate, the hybrid states at the interface between a magnetic material and an organic layer, in a way to affect the effective spin-orbit coupling at such an interface. This will allow us to control the interfacial magnetism of a wide range of magnetic and supporting compounds, thus providing a universal platform, which is not specific to the rare magnets exhibiting massive voltage-control magneto-crystalline anisotropy coefficients. INTERFAST will demonstrate the applicability of this technology to a range of key spintronic functions, encompassing voltage control of magnetisation reversal at fJ/bit energy cost, drastic reduction of the spin-orbit-torque switching currents, and ultrafast THz information processing in all-metallic spintronic devices aided by gateable hybridisation unit.
Partner:
- CONSIGLIO NAZIONALE DELLE RICERCHE IT
- TECHNISCHE UNIVERSITAT DORTMUND DE
- UNIVERSITY OF LEEDS UK
- THE PROVOST, FELLOWS, FOUNDATION SCHOLARS & THE OTHER MEMBERS OF BOARD OF THE COLLEGE OF THE HOLY & UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN IE
- INSTITUT JOZEF STEFAN SI
- Asociacion – Centro de Investigacion Cooperativa en Nanociencias – CIC NANOGUNE ES
- Tyndall National Institute IE
- EBERHARD KARLS UNIVERSITAET TUEBINGEN DE
Resp. Scientifico: Dr. Dediu
Tipologia: H2020 FETOPEN
Acronimo: INTERFAST
Durata: 01/05/2021 – 30/04/2024
